S6337-01 is a large area si photodiode that features excellent spatial response uniformity over a wide range from uv to ir. s63 37-01 will prove useful for precision photometry and as a standard detector for spectral response calibration. features l large active area: 18 18 mm l excellent uniformity even at wavelengths longer than 1000 nm l high uv sensitivity l windowless package applications l precision photometry l spectral response calibration l analytical equipment l trap detector photodiode si photodiode large area photodiode for uv to ir, precision photometry S6337-01 absolute maximum ratings (ta=25 c) parameter symbol value unit reverse voltage v r max.5 v operating temperature topr 0 to +60 c storage temperature tstg 0 to +80 c electrical and optical characteristics (ta=25 c) parameter symbol condition min. typ. max. unit spectral response range - 190 to 1100 - nm peak sensitivity wavelength p - 960 - nm photo sensitivity s = p -530-ma/w short circuit current isc 100 lx , 2856 k 200 250 - a dark current i d v r =10 mv - 50 1000 pa rise time tr v r =0 v, r l =1 k ? , =660 nm - 7 - s terminal capacitance ct v r =0 v, f=10 khz - 3.5 - nf shunt resistance rsh v r =10 mv 10 200 - m ? uniformity * u within 80 % of active area =190 to 1100 nm --0.5% kspdb0177ea sensitivity uniformity (typical example, =1100 nm) position on active area (mm) relative sensitivity (%) (ta=25 ?c, spot light size: 35 m m) -10 0 -8 2 -6 4 -4 6 -2 8 1 0 0 40 20 60 100 80 120 uniformity =0.3 % kspdb0178ea 02 -6 4 -4 6 -2 0 40 20 60 100 80 120 position on active area (mm) relative sensitivity (%) (ta=25 ? c, spot light size: 35 m m) uniformity=5.6 % * uniformity = rs/rm rs: photo sensitivity at any point within 80 % of the active area rm: averaged photo sensitivity within 80 % of the active area S6337-01 (18 18 mm) s1337-1010bq (10 10 mm)
si photodiode S6337-01 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, http://www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?2004 hamamatsu photonics k.k. cat. no. kspd1029e01 may 2004 dn 190 1000 800 600 400 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 wavelength (nm) photo sensitivity (a/w) (typ. ta=25 ? c) qe=100% kspdb0167ea spectral response kspdb0166ea dark current vs. reverse voltage 0.01 0.1 1 10 1 pa 10 pa 100 pa 1 na 10 na reverse voltage (v) dark current (typ. ta=25 ? c) kspdb0165ea terminal capacitance vs. reverse voltage dimensional outline (unit: mm) photosensitive surface wire protection 18.0 3.4 25.5 18.0 25.5 ( 10 ) 2.54 0.2 1.2 5.0 1.75 + 0 - 0.6 + 0 - 0.6 active area 0.45 lead white ceramic kspda0128ea 0.1 1 10 10 pf 100 pf 1 nf 10 nf reverse voltage (v) terminal capacitance (typ. ta=25 ? c, f=1 mhz)
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